Total Ionizing Dose (TID) and Displacement Damage (DD) Effects in Integrated Circuits: Recent Results and the Implications for Emerging Technology

Over the last 50 years, the effects of cumulative radiation damage in microelectronics, and now nanoelectronics, have continually presented a design and assurance challenge to space flight missions. Feature sizes, that is, the size of the unit structure in microelectronics, has continually decreased, which has presented an added complexity to testing and assuring microelectronic devices. This paper outlines the paradigm shifts of total ionizing dose (TID) and displacement damage (DD) effects as device sizes have reduced and highlights some of the strategies developed to insert apply microelectronics into space. The current trends of the technology are analyzed in context of future JPL and NASA missions.